10-FY07NIA100S503-M515F58 target datasheet 13 sep. 2016 / revision 1 1 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit buck switch collector-emitter voltage v ces 650 v collector current i c t j = t jmax t s = 80 c 83 a repetitive peak collector current i crm t p limited by t jmax 300 a total power dissipation p tot t j = t jmax t s = 80 c 125 w gate-emitter voltage v ges 20 v maximum junction temperature t jmax 175 c flow npc 1 650 v / 100 a npc inverter topology high-speed igbt flow 1 12mm package ntc solar ups 10-FY07NIA100S503-M515F58 flow 1 12mm housing schematic features target applications types
10-FY07NIA100S503-M515F58 target datasheet 13 sep. 2016 / revision 1 2 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit buck diode peak repetitive reverse voltage v rrm 650 v continuous (direct) forward current i f t j = t jmax t s = 80 c 82 a repetitive peak forward current i frm 200 a total power dissipation p tot t j = t jmax t s = 80 c 106 w maximum junction temperature t jmax 175 c boost switch collector-emitter voltage v ces 650 v collector current i c t j = t jmax t s = 80 c 149 a repetitive peak collector current i crm t p limited by t jmax 450 a total power dissipation p tot t j = t jmax t s = 80 c 164 w gate-emitter voltage v ges 20 v maximum junction temperature t jmax 175 c boost diode/boost inverse diode peak repetitive reverse voltage v rrm 650 v continuous (direct) forward current i f t j = t jmax t s = 80 c 83 a repetitive peak forward current i frm 200 a total power dissipation p tot t j = t jmax t s = 80 c 119 w maximum junction temperature t jmax 175 c module properties thermal properties storage temperature t stg -40+125 c operation temperature under switching condition t jop -40( t jmax - 25) c isolation properties isolation voltage v isol dc test voltage t p = 2 s 4000 v creepage distance min. 12,7 mm clearance 8,07 mm comparative tracking index cti > 200
10-FY07NIA100S503-M515F58 target datasheet 13 sep. 2016 / revision 1 3 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max buck switch static gate-emitter threshold voltage v ge(th) v ge = v ce 0,001 25 3,2 4 4,8 v collector-emitter saturation voltage v cesat 15 100 25 1,35 1,75 v collector-emitter cut-off current i ces 0 650 25 100 a gate-emitter leakage current i ges 20 0 25 200 na internal gate resistance r g none input capacitance c ies f = 1 mhz 0 25 25 6200 pf output capacitance c oes 176 reverse transfer capacitance c res 24 gate charge q g 15 520 100 25 240 nc thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 0,76 k/w buck diode static forward voltage v f 100 25 1,50 1,77 v 125 1,43 150 1,40 reverse leakage current i r 650 25 5,3 a thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 0,90 k/w
10-FY07NIA100S503-M515F58 target datasheet 13 sep. 2016 / revision 1 4 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max boost switch static gate-emitter threshold voltage v ge(th) v ge = v ce 0,002 25 4,2 5 5,8 v collector-emitter saturation voltage v cesat 15 150 25 1,10 1,45 v 150 1,09 collector-emitter cut-off current i ces 0 650 25 80 a gate-emitter leakage current i ges 20 0 25 200 na internal gate resistance r g none input capacitance c ies f = 1 mhz 0 25 25 23250 pf reverse transfer capacitance c res 60 gate charge q g 15 520 75 25 872 nc thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 0,58 k/w boost diode/boost inverse diode static forward voltage v f 100 25 1,77 1,82 v 150 1,57 reverse leakage current i r 650 25 54 a thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 0,8 k/w thermistor rated resistance r 25 22 k deviation of r 100 r/r r 100 = 1484 100 -5 5 % power dissipation p 25 5 mw power dissipation constant 25 1,5 mw/ k b-value b (25/50) tol. 1 % 25 3962 k b-value b (25/100) tol. 1 % 25 4000 k vincotech ntc reference i
10-FY07NIA100S503-M515F58 target datasheet 13 sep. 2016 / revision 1 5 copyright vincotech date code ul & vin lot serial wwyy ul vin lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function pin x y function 1 52,2 6,9 ntc1 30 46 24 g2-a 2 52,2 0 ntc2 31 52,2 20,1 out 3 36,2 6,75 e3 32 49,5 22,8 out 4 33,2 7,9 g3-a 33 52,2 22,8 out 5 33,2 4,9 g3-b 34 49,5 25,5 out 6 9,2 5,75 e4 35 52,2 25,5 out 7 6,2 6,9 g4-a 36 49,5 28,2 out 8 6,2 3,9 g4-b 37 52,2 28,2 out 9 2,7 0 dc- 10 0 0 dc- 11 2,7 2,7 dc- 12 0 2,7 dc- 13 2,7 5,4 dc- 14 0 5,4 dc- 15 2,7 12,75 gnd 16 0 12,75 gnd 17 2,7 15,45 gnd 18 0 15,45 gnd 19 2,7 22,8 dc+ 20 0 22,8 dc+ 21 2,7 25,5 dc+ 22 0 25,5 dc+ 23 2,7 28,2 dc+ 24 0 28,2 dc+ 25 18,3 22,45 e1 26 21,3 21,3 g1-b 27 21,3 24,3 g1-a 28 43 22,15 e2 29 46 21 g2-b ordering code 10-FY07NIA100S503-M515F58 pin table [mm] name nn-nnnnnnnnnnnnnn-ttttttvv outline text datamatrix version without thermal paste 12mm housing with solder pins pin table [mm] ordering code & marking nn-nnnnnnnnnnnnnn ttttttvv wwyy ul vin lllll ssss
10-FY07NIA100S503-M515F58 target datasheet 13 sep. 2016 / revision 1 6 copyright vincotech ntc thermistor thermistor 150 a boost switc h boost diode 100 a boost inverse diode fwd 650 v id d2, d3 igbt fwd component d1, d4 fwd t1, t4 d5, d6 650 v 100 a 650 v t2, t3 igbt pinout buc k diode identification comment 650 v voltage current function 650 v 100 a buc k switc h 100 a
10-FY07NIA100S503-M515F58 target datasheet 13 sep. 2016 / revision 1 7 copyright vincotech disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. packaging instruction standard packaging quantity (spq) 100 >spq standard 10-FY07NIA100S503-M515F58 -t1-14 13 sep. 2016 product status definition datasheet status product status definition target formative or in design this datasheet contains the design specifications f or product development. specifications may change in any manner without not ice. the data contained is exclusively intended for technically trained staff.
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